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Other articles related with "carrier concentration"：
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47202 |
Yadong Wang(王亚东), Fujie Zhang(张富界), Xuri Rao(饶旭日), Haoran Feng(冯皓然), Liwei Lin(林黎蔚), Ding Ren(任丁), Bo Liu(刘波), and Ran Ang(昂然) |
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Advancing thermoelectrics by suppressing deep-level defects in Pb-doped AgCrSe2 alloys |
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Chin. Phys. B
2023 Vol.32 (4): 47202-047202
[Abstract]
(210)
[HTML 1 KB]
[PDF 2317 KB]
(103)
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37202 |
Junqi Lai(赖君奇), Bowen Chen(陈博文), Zhiwei Xing(邢志伟), Xuefei Li(李雪飞), Shulong Lu(陆书龙), Qi Chen(陈琪), and Liwei Chen(陈立桅) |
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Quantitative measurement of the charge carrier concentration using dielectric force microscopy |
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Chin. Phys. B
2023 Vol.32 (3): 37202-037202
[Abstract]
(264)
[HTML 1 KB]
[PDF 1173 KB]
(179)
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47212 |
Hao Wang(王浩), Jin Chen(陈进), Tianqi Lu(陆天奇), Kunjie Zhu(朱坤杰), Shan Li(李珊), Jun Liu(刘军), Huaizhou Zhao(赵怀周) |
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Enhanced thermoelectric performance in p-type Mg3Sb2 via lithium doping |
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Chin. Phys. B
2018 Vol.27 (4): 47212-047212
[Abstract]
(1045)
[HTML 1 KB]
[PDF 1035 KB]
(439)
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107101 |
Li Shi-Bin (李世彬), Yu Hong-Ping (余宏萍), Zhang Ting (张婷), Chen Zhi (陈志), Wu Zhi-Ming (吴志明) |
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Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction |
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Chin. Phys. B
2014 Vol.23 (10): 107101-107101
[Abstract]
(440)
[HTML 1 KB]
[PDF 392 KB]
(796)
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4541 |
Zhang Yi-Jun(张益军), Chang Ben-Kang(常本康), Yang Zhi(杨智), Niu Jun(牛军), and Zou Ji-Jun(邹继军) |
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Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy |
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Chin. Phys. B
2009 Vol.18 (10): 4541-4546
[Abstract]
(1660)
[HTML 1 KB]
[PDF 193 KB]
(936)
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213 |
Lei Qing-Song (雷青松), Wu Zhi-Meng (吴志猛), Geng Xin-Hua (耿新华), Zhao Ying (赵颖), Sun Jian (孙健), Xi Jian-Ping (奚建平) |
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Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films |
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Chin. Phys. B
2006 Vol.15 (1): 213-218
[Abstract]
(1179)
[HTML 1 KB]
[PDF 273 KB]
(533)
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